SW038R10ES

SW038R10ES N-channel Enhanced mode TO-247 MOSFET Features TO-247  High ruggedness  Low RDS(ON) (Typ 3.6mΩ)@VGS=10V  Low Gate Charge (Typ 132nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Synchronous Rectification, Inverter , Li Battery Protect Board 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 100V ID : 120A RDS(ON) : 3.6mΩ 2 1 3 Order Codes Item Sales Type Marking Package Packaging 1 SW T 038R10ES SW038R10ES TO-247 TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed (note 1) Gate to source voltage Single pulsed avalanche energy (note 2) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt (note 3) Total power dissipation (@TC=25oC) Derating factor above 25oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. Value 100 120* 110* 480 ±20 1126 106 5 250 2 -55 ~ + 150 300 Unit V A A A V mJ mJ V/ns W W/oC oC oC *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter...