NP100P06PDG
-60V – -100A – P-channel Power MOS FET Application : Automotive
Datasheet
R07DS1515EJ0100 Rev.1.00
Jun. 10,...
NP100P06PDG
-60V – -100A – P-channel Power MOS FET Application : Automotive
Datasheet
R07DS1515EJ0100 Rev.1.00
Jun. 10, 2022
Description
This product is P-channel MOS Field Effect
Transistor designed for high current switching applications.
Features
Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )
Low input capacitance : Ciss = 15000 pF Typ. Designed for automotive application and AEC-Q101 qualified. Pb-free (This product does not contain Pb in the external electrode)
Outline
4
Drain
12 3
1. Gate 2. Drain 3. Source 4. Drain(Fin)
MP-25ZP (TO-263)
Absolute Maximum Ratings
Gate
Source
Equivalent circuit
Item
Symbol
Ratings
Drain to Source Voltage (VGS = 0 V)
VDSS
-60
Gate to Source Voltage (VDS = 0 V)
VGSS
20
Drain Current (DC) (Tc = 25 °C)
ID(DC)
100
Drain Current (pulse)
I Notes1
D(pulse)
300
Total Power Dissipation (Tc = 25 °C)
PT1
200
Total Power Dissipation (Ta = 25 °C)
PT2
1.8
Channel Temperature
Tch
175
Storage Temperature
Tstg
-55 to 175
Single Avalanche Current
I Notes2
AS
64
Single Avalanche Energy
E Notes2 AS
420
Notes 1. PW 10 s , Duty Cycle 1%
2. Starting Tch=25℃ , VDD = -30V , RG = 25 , VGS = -20 0V , L = 100H
(Ta=25°C)
Unit
V V A A W W °C °C A mJ
R07DS1515EJ0100 Rev.1.00 Jun.10.2022
Page 1 of 7
NP100P06PDG
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-c) Notes...