2SK3726-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown ...
2SK3726-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
200305
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Applications Switching
regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage
Symbol VDS
Ratings 450
Unit V
Continuous drain current
ID
±3
A
Pulsed drain current
ID(puls]
±12
A
Gate-source voltage
VGS
±30
V
Repetitive or non-repetitive
IAR
*2
3
A
Maximum Avalanche Energy
EAS
*1
92.8
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt Max. power dissipation
dV/dt *3 PD Ta=25°C
Tc=25°C
5 2.16 17
kV/µs W
Operating and storage
Tch
temperature range
Tstg
+150
°C
-55 to +150
°C
Isolation Voltage
VISO *6
2000
*1 L=18.9mH, Vcc=45V, Tch=25°C See to Avalanche Energy Graph *3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 450V
Vrms *2 Tch =<150°C *6 f=60Hz, t=60sec.
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton
Turn-off ti...