2SK3804-01S

2SK3804-01S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET ■Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof ■Outline Drawings [mm] ■Equivalent circuit schematic Drain (D) ■Applications Switching regulators DC-DC converters General purpose power amplifier Gate (G) Source (S) ■Absolute Maximum Ratings at Tc=25℃(unless otherwise specified) Description Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 75 VDSX 40 Continuous Drain Current ID ±70 Pulsed Drain Current IDP ±280 Gate-Source Voltage VGS ±20 Non-Repetitive Maximum Avalanche current IAS 70 Non-Repetitive Maximum Avalanche Energy EAS 133 Maximum Power Dissipation PD 135 Tch Operating and Storage Temperature range Tstg 150 -55 to +150 Note*1 : Tch≦150℃,See Fig.1 and Fig.2 Note*2 : Starting Tch=25℃,L=25μH,VCC=48V,RG=50Ω,See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. See to Avalanche Energy graph of page 4 ■Electrical Characteristics at Tc=25℃(unless otherwise specified) Static Ratings V V VGS=-20V A A V A Note*1 mJ Note*2 W ℃ ℃ Description Symbol Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS BVDSX Gate Threshold Voltage VGS(th) ID=1mA VGS=0V ID=1mA VGS=-20V ID=10mA VDS= VGS 75 － － V 40 － － V 2.5 3.0 3.5 V Zero Gate Voltage Drain current IDSS VDS= 75V VGS=0V Tch=25℃ － 1 100 μA Tch=125℃ － 10 ...