2SK3804-01S FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Trench Power MOSFET
■Features
High speed switching Low o...
2SK3804-01S FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Trench Power MOSFET
■Features
High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof
■Outline Drawings [mm]
■Equivalent circuit schematic Drain (D)
■Applications
Switching
regulators DC-DC converters General purpose power amplifier
Gate (G)
Source (S)
■Absolute Maximum Ratings at Tc=25℃(unless otherwise specified)
Description
Symbol
Characteristics
Unit
Remarks
Drain-Source Voltage
VDS
75
VDSX
40
Continuous Drain Current
ID
±70
Pulsed Drain Current
IDP
±280
Gate-Source Voltage
VGS
±20
Non-Repetitive Maximum Avalanche current
IAS
70
Non-Repetitive Maximum Avalanche Energy
EAS
133
Maximum Power Dissipation
PD
135
Tch Operating and Storage Temperature range
Tstg
150 -55 to +150
Note*1 : Tch≦150℃,See Fig.1 and Fig.2 Note*2 : Starting Tch=25℃,L=25μH,VCC=48V,RG=50Ω,See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current. See to Avalanche Energy graph of page 4
■Electrical Characteristics at Tc=25℃(unless otherwise specified) Static Ratings
V
V
VGS=-20V
A
A
V
A
Note*1
mJ
Note*2
W
℃
℃
Description
Symbol Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS BVDSX
Gate Threshold Voltage
VGS(th)
ID=1mA VGS=0V
ID=1mA VGS=-20V
ID=10mA VDS= VGS
75
-
-
V
40
-
-
V
2.5
3.0
3.5
V
Zero Gate Voltage Drain current
IDSS
VDS= 75V VGS=0V
Tch=25℃
-
1
100
μA
Tch=125℃
-
10
...