FJL4315

NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 Features High Current Capability: IC = 17 A High Power Dissipation: 150 W High Frequency: 30 MHz High Voltage: VCEO = 250 V Wide S.O.A. for Reliable Operation Excellent Gain Linearity for Low THD Complement to 2SA1943 / FJL4215 Thermal and Electrical Spice Models are Available Same Transistor is also Available in: ♦ TO3P Package, 2SC5242 / FJA4313 : 130 Watts ♦ TO220 Package, FJP5200 : 80 Watts ♦ TO220F Package, FJPF5200 : 50 Watts These Devices are Pb−Free and are RoHS Compliant Applications High−Fidelity Audio Output Amplifier General Purpose Power Amplifier ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Ratings Units Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current (DC) Base Current Total Device Dissipation (TC = 25°C) Derate Above 25°C BVCBO BVCEO BVEBO IC IB PD 250 V 250 V 5 V 17 A 1.5 A 150 W 1.04 W/°C Junction and Storage Temperature TJ, TSTG −50 ~ +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) (TA = 25°C unless otherwise noted) Parameter Symbol Thermal Resistance, Junction to Case 1. Device mounted on minimum pad size. RqJC Max. 0.83 Units °C/W hFE CLASSIFICATION Classification hFE1 R 55 ~ ...