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3DA76 Datasheet, Equivalent, Power Transistor.

Silicon NPN Power Transistor

Silicon NPN Power Transistor

 

 

 

Part 3DA76
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor DESCRI PTION ·High DC Current Gain- : hFE= 15 (Max) @IC= 0.
3A ·Excellent Safe Operat ing Area ·Minimum Lot-to-Lot variation s for robust device performance and rel iable operation APPLICATIONS ·Designe d for use as an output device in comple mentary audio amplifiers ABSOLUTE MAXI MUM RATINGS(Ta=25℃) SYMBOL PARAMETE R VALUE UNIT VCEO Collector-Emitter V oltage 65 V VEBO Emitter-Base Volta ge 4.
0 V IC Collector Current-Conti nuous 0.
5 A PC Collector Power Diss ipation@TC=75℃ 7.
5 W TJ Junction Temperature 175 ℃ Tstg Storage Te mperature Range -55-175 .
Manufacture Inchange Semiconductor
Datasheet
Download 3DA76 Datasheet
Part 3DA76
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor DESCRI PTION ·High DC Current Gain- : hFE= 15 (Max) @IC= 0.
3A ·Excellent Safe Operat ing Area ·Minimum Lot-to-Lot variation s for robust device performance and rel iable operation APPLICATIONS ·Designe d for use as an output device in comple mentary audio amplifiers ABSOLUTE MAXI MUM RATINGS(Ta=25℃) SYMBOL PARAMETE R VALUE UNIT VCEO Collector-Emitter V oltage 65 V VEBO Emitter-Base Volta ge 4.
0 V IC Collector Current-Conti nuous 0.
5 A PC Collector Power Diss ipation@TC=75℃ 7.
5 W TJ Junction Temperature 175 ℃ Tstg Storage Te mperature Range -55-175 .
Manufacture Inchange Semiconductor
Datasheet
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3DA76

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