3DA76

isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 15(Max) @IC= 0.3A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current-Continuous 0.5 A PC Collector Power Dissipation@TC=75℃ 7.5 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -55-175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W 3DA76 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC= 50mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB=0.1A ICBO Emitter Cutoff current VCE= 24V; IC=0 IEBO Emitter Cutoff current VEB= 4.0V; IC=0 hFE DC Current Gain IC=0.3A ; VCE=10V 3DA76 MIN MAX UNIT 65 V 1.5 V 1.0 mA 0.2 mA 15 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general ...