CNY171M

6-Pin DIP High BVCEO Phototransistor Optocouplers CNY17 Series, MOC8106M Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package. Features  High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)  Closely Matched Current Transfer Ratio (CTR) Minimizes Unit−to−Unit Variation  Current Transfer Ratio In Select Groups  Very Low Coupled Capacitance Along With No Chip−to−Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M)  Safety and Regulatory Approvals:  UL1577, 4,170 VACRMS for 1 Minute  DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage Applications  Power Supply Regulators  Digital Logic Inputs  Microprocessor Inputs  Appliance Sensor Systems  Industrial Controls DATA SHEET www.onsemi.com 6 1 PDIP6 CASE 646BY 6 1 PDIP6 CASE 646BX 6 1 PDIP6 CASE 646BZ MARKING DIAGRAM ON 1 CNY17−1 2 V X YY Q 6 34 5 1. ON = onsemi Logo 2. CNY17 = Device Number 3. V = DIN EN/IEC60747−5−5 Option (only appears on component ordered with this option) 4X = One−Digit Year Code 5. YY = Digit Work Week 6. Q = Assembly Package Code ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet.  Semiconductor Components Industries, LLC, 2006 1 December, 2022 − Rev. 3 Publication Order Number: CNY17F4M/D CNY17 Series, MOC8106M SCHEMATICS ANODE 1 CATHODE 2 6 NC 5 COLLECTOR ANODE 1 CATHODE 2 ...