6-Pin DIP High BVCEO Phototransistor Optocouplers
CNY17 Series, MOC8106M
Description The CNY17XM, CNY17FXM, and MOC8106M...
6-Pin DIP High BVCEO Photo
transistor Optocouplers
CNY17 Series, MOC8106M
Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of
a gallium arsenide infrared emitting diode coupled with an
NPN photo
transistor in a dual in−line package.
Features
High BVCEO: 70 V Minimum
(CNY17XM, CNY17FXM, MOC8106M)
Closely Matched Current Transfer Ratio (CTR) Minimizes
Unit−to−Unit Variation
Current Transfer Ratio In Select Groups Very Low Coupled Capacitance Along With
No Chip−to−Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M)
Safety and
Regulatory Approvals:
UL1577, 4,170 VACRMS for 1 Minute DIN−EN/IEC60747−5−5, 850 V Peak Working
Insulation Voltage
Applications
Power Supply
Regulators Digital Logic Inputs Microprocessor Inputs Appliance Sensor Systems Industrial Controls
DATA SHEET www.onsemi.com
6 1
PDIP6 CASE 646BY
6 1
PDIP6 CASE 646BX
6 1
PDIP6 CASE 646BZ
MARKING DIAGRAM
ON 1 CNY17−1 2 V X YY Q 6
34
5
1. ON = onsemi Logo
2. CNY17 = Device Number
3. V
= DIN EN/IEC60747−5−5 Option
(only appears on component ordered
with this option)
4X
= One−Digit Year Code
5. YY = Digit Work Week
6. Q
= Assembly Package Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of this data sheet.
Semiconductor Components Industries, LLC, 2006
1
December, 2022 − Rev. 3
Publication Order Number: CNY17F4M/D
CNY17 Series, MOC8106M
SCHEMATICS
ANODE 1 CATHODE 2
6 NC 5 COLLECTOR
ANODE 1 CATHODE 2
...