BUTW92 | Inchange Semiconductor
Silicon NPN Power Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·High current ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBS
Collector-Emitter Voltage (VBE= 0)
500
V
VCEO
Collector-Emitter Voltage
2.
- BUTW92 | Inchange Semiconductor
- Silicon NPN Power Transistor
- isc Silicon NPN Power Transistor
DESCRIPTION ·High current ·High Speed Switching ·Minimum Lot-to-Lo.
- isc Silicon NPN Power Transistor
DESCRIPTION ·High current ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBS
Collector-Emitter Voltage (VBE= 0)
500
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Col.
- BUTW92 | STMicroelectronics
- HIGH CURRENT NPN SILICON TRANSISTOR
- ® BUTW92
HIGH CURRENT NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s NPN TRANSI.
- ® BUTW92
HIGH CURRENT NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s NPN TRANSISTOR
APPLICATIONS: s MOTOR CONTROL s HIGH FREQUENCY AND EFFICIENCY
CONVERTERS
DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency converters and motor controls.
3 2 1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VCEO VEBO IE IEM IB IBM Ptot Tstg Tj
Parameter Collect.