BUTW92

isc Silicon NPN Power Transistor DESCRIPTION ·High current ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBS Collector-Emitter Voltage (VBE= 0) 500 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 60 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 70 A 180 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W BUTW92 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUTW92 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 5mA; VEB =0 500 V VEBO Emitter-Base Breakdown Voltage IE= 1mA 7 VCE(sat) Collector-Emitter Saturation Voltage IC= 60A; IB= 15A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 60A; IB= 15A VCE=RatedVCES ;VBE= 0 VCE=RatedVCES ;VBE= 0;TC=100℃ VEB= 5.0V; IC= 0 1.9 V 0.05 1.0 mA 0.05 mA hFE-1 DC Current Gain IC= 60A; VCE= 3V 9 hFE-2 DC Current Gain IC= 5A; VCE= 3V 65 NOTICE： ISC r...