www.vishay.com
VS-MBRB1035-M3, VS-MBRB1045-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 10 A
Base ca...
www.vishay.com
VS-MBRB1035-M3, VS-MBRB1045-M3
Vishay Semiconductors
High Performance
Schottky Rectifier, 10 A
Base cathode
2
2 1
3 D2PAK (TO-263AB)
1 N/C
3 Anode
PRIMARY CHARACTERISTICS
IF(AV) VR VF at IF IRM TJ max. EAS Package
10 A 35 V, 45 V
0.57 V 15 mA at 125 °C
150 °C 8 mJ D2PAK (TO-263AB)
Circuit configuration
Single
FEATURES 150 °C TJ operation TO-220 and D2PAK packages
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
Designed and qualified according to JEDEC®-JESD 47
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION This
Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
IFRM VRRM IFSM
TC = 135 °C tp = 5 μs sine
VF
10 Apk, TJ = 125 °C
TJ
Range
VALUES 10 20
35/45 1060 0.57 -65 to +150
UNITS
A
V A V C°
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage
SYMBOL VR
VRWM
VS-MBRB1035-...