MBRB1035

www.vishay.com VS-MBRB1035-M3, VS-MBRB1045-M3 Vishay Semiconductors High Performance Schottky Rectifier, 10 A Base cathode 2 2 1 3 D2PAK (TO-263AB) 1 N/C 3 Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM TJ max. EAS Package 10 A 35 V, 45 V 0.57 V 15 mA at 125 °C 150 °C 8 mJ D2PAK (TO-263AB) Circuit configuration Single FEATURES 150 °C TJ operation TO-220 and D2PAK packages Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Designed and qualified according to JEDEC®-JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform IFRM VRRM IFSM TC = 135 °C tp = 5 μs sine VF 10 Apk, TJ = 125 °C TJ Range VALUES 10 20 35/45 1060 0.57 -65 to +150 UNITS A V A V C° VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-MBRB1035-...