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DSSK60-0045A

Inchange Semiconductor

Schottky Barrier Rectifier

Schottky Barrier Rectifier DSSK60-0045A FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current....


Inchange Semiconductor

DSSK60-0045A

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Description
Schottky Barrier Rectifier DSSK60-0045A FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High Efficiency. ·High Junction Temperature Capability ·RoHs Product. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Low Voltage High Frequency Switching Power Supply. ·Low Voltage High Frequency Invers Circuit. ·Low Voltage Continued Circuit and Protection Circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFSM TJ Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR-20Khz Square Wave) - 50% duty cycle Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions Junction Temperature Tstg Storage Temperature Range dv/dt Voltage Rate of Change (Rated VR) THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case VALUE UNIT 45 V 60 A 500 A -40~150 ℃ -40~150 ℃ 10,000 V/μs MAX 0.5 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier DSSK60-0045A ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤2.0%) SYMBOL PARAMETER CONDITIONS IF= 30A ; Tc= 25℃ VF Maximum Instantaneous Forward Voltage IF= 30A ; Tc= 125℃ VR= VRWM;Tc= 25℃ IR Maximum Instantaneous Reverse Current VR= VRWM;Tc= 125℃ MAX 0.61 0.58 1.0 ...




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