isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage
: VCEO(SUS)= 250V (Min.) ...
isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage
: VCEO(SUS)= 250V (Min.) ·High DC Current Gain
: hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage
: VCE (sat)= 1.0V(Max.)@ IC= 5.0A ·Complement to Type MJH11021 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifiers, low frequency
switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
250
VCEO
Collector-Emitter Voltage
250
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continunous
15
ICM
Collector Current-Peak
30
IB
Base Current-Continunous
0.5
PC
Collector Power Dissipation @TC=25℃
150
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.833 ℃/W
MJH11022
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage
IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage
IC= 10A; IB= 0.1A
V CE(sat)-2 Collector-Emitter Saturation Voltage
IC= 15A; IB= 0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A; IB= 0.15A
VBE(on) Base-Emitter On Voltage...