NGTB30N60SWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Tr...
NGTB30N60SWG
IGBT
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features
Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb−Free Devices
Typical Applications
Inverter Welding UPS Systems
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current @ TC = 25°C @ TC = 100°C
Pulsed collector current, Tpulse limited by TJmax
Diode forward current @ TC = 25°C @ TC = 100°C
Diode pulsed current, Tpulse limited by TJmax
Gate−emitter voltage
Power Dissipation @ TC = 25°C @ TC = 100°C
Operating junction temperature range
VCES
600
V
IC
A
60
30
ICM
120
A
IF
A
60
30
IFM
120
A
VGE
$20
V
PD
W
189
76
TJ
−55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8″ from case for 5 seconds
Tstg TSLD
−55 to +150 °C
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur...