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FGD3N60LSD Dataheets PDF



Part Number FGD3N60LSD
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description IGBT
Datasheet FGD3N60LSD DatasheetFGD3N60LSD Datasheet (PDF)

FGD3N60LSD IGBT FGD3N60LSD IGBT Features • High Current Capability • Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A • High Input Impedance Applications • HID Lamp Applications • Piezo Fuel Injection Applications C Description ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica-tions where very low On-Voltage Drop is a required feature. C G E D-PAK G E Absolute Maximum Ratings Symbol Description VCE.

  FGD3N60LSD   FGD3N60LSD


ISL9V5036S3ST-F085C FGD3N60LSD ISL9V3036S3ST-F085C


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