NGTB30N65IHL2WG

NGTB30N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Losses in IH Cooker Application TJmax = 175°C Soft, Fast Free Wheeling Diode This is a Pb−Free Device Typical Applications Inductive Heating Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 650 V IC A 60 30 Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C ICM 120 A IF A 60 30 Diode pulsed current, Tpulse limited by TJmax Gate−emitter voltage Power Dissipation @ TC = 25°C @ TC = 100°C Operating junction temperature range IFM 120 A VGE $20 V PD W 300 150 TJ −55 to +175 °C Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Tstg TSLD −55 to +175 °C 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device fun...