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HGTG20N60A4 Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part HGTG20N60A4
Description IGBT
Feature IGBT - SMPS 600 V, 40 A HGTG20N60A4 Desc ription The HGTG20N60A4 combines the be st features of high input impedance of a MOSFET and the low on−state conduct ion loss of a bipolar transistor.
This IGBT is ideal for many high voltage swi tching applications operating at high f requencies where low conduction losses are essential.
This device has been opt imized for fast switching applications, such as UPS, welder and induction heat ing.
Features
• 40 A, 600 V @ TC = 11 0°C
• Low Saturation Voltage: VCE(sa t) = 1.
8 V @ IC = 20 A
• Typical Fall Time: 55 ns at TJ = 125°C
• Low Con duction Loss
• This is a P .
Manufacture ON Semiconductor
Datasheet
Download HGTG20N60A4 Datasheet
Part HGTG20N60A4
Description IGBT
Feature IGBT - SMPS 600 V, 40 A HGTG20N60A4 Desc ription The HGTG20N60A4 combines the be st features of high input impedance of a MOSFET and the low on−state conduct ion loss of a bipolar transistor.
This IGBT is ideal for many high voltage swi tching applications operating at high f requencies where low conduction losses are essential.
This device has been opt imized for fast switching applications, such as UPS, welder and induction heat ing.
Features
• 40 A, 600 V @ TC = 11 0°C
• Low Saturation Voltage: VCE(sa t) = 1.
8 V @ IC = 20 A
• Typical Fall Time: 55 ns at TJ = 125°C
• Low Con duction Loss
• This is a P .
Manufacture ON Semiconductor
Datasheet
Download HGTG20N60A4 Datasheet

HGTG20N60A4

HGTG20N60A4
HGTG20N60A4

HGTG20N60A4

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