Document
IGBT - NPT
1200 V
HGTG18N120BND
Description HGTG18N120BND is based on Non− Punch Through (NPT) IGBT
designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
Features
• 26 A, 1200 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A • Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss • This Device is Pb−Free
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G E
E C G
TO−247−3LD CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K 18N120BND
© Semiconductor Components Industries, LLC, 2001
February, 2020 − Rev. 3
$Y &Z &3 &K 18N120BND
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
1
Publication Order Number:
HGTG18N120BND/D
HGTG18N120BND
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Description
Ratings
Unit
BVCES
Collector to Emitter Voltage
1200
V
IC
Collector Current Continuous
TC = 25°C
54
A
TC = 110°C
26
A
ICM
Collector Current Pulsed (Note 1)
TC = 25°C
160
A
VGES
Gate to Emitter Voltage Continuous
±20
V
VGEM
Gate to Emitter Voltage Pulsed
±30
V
SSOA
Switching Safe Operating Area at TJ = 150°C (Figure 2)
100 A at 1200 V
PD
Power Dissipation Total
TC = 25°C
390
W
Power Dissipation Derating
TC > 25°C
3.12
W/°C
TJ, TSTG
Operating and Storage Junction Temperature Range
−55 to +150
°C
TL
Maximum Lead Temp. for Soldering
260
°C
TSC
Short Circuit Withstand Time (Note 2)
VGE = 15 V
8
ms
Short Circuit Withstand Time (Note 2)
VGE = 12 V
15
ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 960 V, TJ = 125°C, RG = 3 W.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
HGTG18N120BND
18N120BND
Package TO−247
Packing Method Tube
Shipping 450/Tube
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
BVCES BVECS
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage
IC = 250 mA, VGE = 0 V IC = 10 mA, VGE = 0 V
ICES
Collector to Emitter Leakage Current
VCE = 1200 V, TC = 25°C
VCE(SAT) Collector to Emitter Saturation Voltage
VGE = 1200 V, TC = 125°C VGE = 1200 V, TC = 150°C IC = 18 A, VGE = 15 V, TC = 25°C
IC = 18 A, VGE = 15 V, TC = 150°C
VGE(th)
Gate to Emitter Threshold Voltage
IC = 150 mA, VCE = VGE
IGES
Gate to Emitter Leakage Current
VGE = ±20 V
SSOA
Switching SOA
TJ = 150°C, RG = 3 W, VGE = 15 V, L = 200 mH, VCE(PK) = 1200 V
VGEP
Gate to Emitter Leakage Current
IC = 18 A, VCE = 600 V
QG(ON)
On−State Gate Charge
IC = 18 A, VCE = 600 V, VGE = 15 V
IC = 18 A, VCE = 600 V, VGE = 20 V
Min. Typ. Max. Unit
1200
−
−
V
15
−
−
V
−
−
250
mA
−
300
−
mA
−
−
4
mA
−
2.45
2.7
V
−
3.8
4.2
V
6.0
7.0
−
V
−
−
±250
nA
100
−
A
−
10.5
−
V
−
165
200
nC
−
220
250
nC
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HGTG18N120BND
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Td(on)I TrI
Td(off)I TfI Eon Eoff
Td(on)l Trl
Td(off) Tfl Eon Eoff
Current Turn−On Delay Time Current Rise Time Current Turn−Off Delay Time Current Fall Time Turn−On Energy Turn−Off Energy (Note 3) Current Turn−On Delay Time Current Rise Time Current Turn−Off Delay Time Current Fall Time Turn−On Energy Turn−Off Energy (Note 3)
IGBT and Diode at TJ = 25°C
−
ICE = 18 A
VCE = 960 V
−
VGE = 15 V RG = 3 W
−
L = 1 mH Test Circuit (Figure 20)
−
−
−
IGBT and Diode at TJ = 150°C
−
ICE = 18 A
VCE = 960 V
−
VGE = 15 V RG = 3 W
−
L = 1 mH Test Circuit (Figure 20)
−
−
−
23
28
ns
17
22
ns
170
200
ns
90
140
ns
1.9
2.4
mJ
1.8
2.2
mJ
21
26
ns
17
22
ns
205
240
ns
140
200
ns
3.7
4.9
mJ
2.6
3.1
mJ
VEC
Diode Forward Voltage
trr
Diode Reverse Recovery Time
IEC = 18 A
−
IEC = 18 A, dIEC/dt = 200 A/ms
−
2.6
3.2
V
60
75
ns
RqJC
Thermal Resistance Junction To Case
IEC = 2 A, dIEC/dt = 200 A/ms
−
IGBT
−
44
55
ns
−
0.32 °C/W
Diode
−
−
0.75 °C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power .