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HGTG18N120BND Dataheets PDF



Part Number HGTG18N120BND
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description IGBT
Datasheet HGTG18N120BND DatasheetHGTG18N120BND Datasheet (PDF)

IGBT - NPT 1200 V HGTG18N120BND Description HGTG18N120BND is based on Non− Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies. Features • 26 A, 1200 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A • Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C • Short Circuit Rating • Low.

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IGBT - NPT 1200 V HGTG18N120BND Description HGTG18N120BND is based on Non− Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies. Features • 26 A, 1200 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A • Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss • This Device is Pb−Free www.onsemi.com C G E E C G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K 18N120BND © Semiconductor Components Industries, LLC, 2001 February, 2020 − Rev. 3 $Y &Z &3 &K 18N120BND = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: HGTG18N120BND/D HGTG18N120BND ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Description Ratings Unit BVCES Collector to Emitter Voltage 1200 V IC Collector Current Continuous TC = 25°C 54 A TC = 110°C 26 A ICM Collector Current Pulsed (Note 1) TC = 25°C 160 A VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SSOA Switching Safe Operating Area at TJ = 150°C (Figure 2) 100 A at 1200 V PD Power Dissipation Total TC = 25°C 390 W Power Dissipation Derating TC > 25°C 3.12 W/°C TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C TL Maximum Lead Temp. for Soldering 260 °C TSC Short Circuit Withstand Time (Note 2) VGE = 15 V 8 ms Short Circuit Withstand Time (Note 2) VGE = 12 V 15 ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 960 V, TJ = 125°C, RG = 3 W. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark HGTG18N120BND 18N120BND Package TO−247 Packing Method Tube Shipping 450/Tube ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions BVCES BVECS Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage IC = 250 mA, VGE = 0 V IC = 10 mA, VGE = 0 V ICES Collector to Emitter Leakage Current VCE = 1200 V, TC = 25°C VCE(SAT) Collector to Emitter Saturation Voltage VGE = 1200 V, TC = 125°C VGE = 1200 V, TC = 150°C IC = 18 A, VGE = 15 V, TC = 25°C IC = 18 A, VGE = 15 V, TC = 150°C VGE(th) Gate to Emitter Threshold Voltage IC = 150 mA, VCE = VGE IGES Gate to Emitter Leakage Current VGE = ±20 V SSOA Switching SOA TJ = 150°C, RG = 3 W, VGE = 15 V, L = 200 mH, VCE(PK) = 1200 V VGEP Gate to Emitter Leakage Current IC = 18 A, VCE = 600 V QG(ON) On−State Gate Charge IC = 18 A, VCE = 600 V, VGE = 15 V IC = 18 A, VCE = 600 V, VGE = 20 V Min. Typ. Max. Unit 1200 − − V 15 − − V − − 250 mA − 300 − mA − − 4 mA − 2.45 2.7 V − 3.8 4.2 V 6.0 7.0 − V − − ±250 nA 100 − A − 10.5 − V − 165 200 nC − 220 250 nC www.onsemi.com 2 HGTG18N120BND ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit Td(on)I TrI Td(off)I TfI Eon Eoff Td(on)l Trl Td(off) Tfl Eon Eoff Current Turn−On Delay Time Current Rise Time Current Turn−Off Delay Time Current Fall Time Turn−On Energy Turn−Off Energy (Note 3) Current Turn−On Delay Time Current Rise Time Current Turn−Off Delay Time Current Fall Time Turn−On Energy Turn−Off Energy (Note 3) IGBT and Diode at TJ = 25°C − ICE = 18 A VCE = 960 V − VGE = 15 V RG = 3 W − L = 1 mH Test Circuit (Figure 20) − − − IGBT and Diode at TJ = 150°C − ICE = 18 A VCE = 960 V − VGE = 15 V RG = 3 W − L = 1 mH Test Circuit (Figure 20) − − − 23 28 ns 17 22 ns 170 200 ns 90 140 ns 1.9 2.4 mJ 1.8 2.2 mJ 21 26 ns 17 22 ns 205 240 ns 140 200 ns 3.7 4.9 mJ 2.6 3.1 mJ VEC Diode Forward Voltage trr Diode Reverse Recovery Time IEC = 18 A − IEC = 18 A, dIEC/dt = 200 A/ms − 2.6 3.2 V 60 75 ns RqJC Thermal Resistance Junction To Case IEC = 2 A, dIEC/dt = 200 A/ms − IGBT − 44 55 ns − 0.32 °C/W Diode − − 0.75 °C/W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power .


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