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HGTG18N120BND Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part HGTG18N120BND
Description IGBT
Feature IGBT - NPT 1200 V HGTG18N120BND Descript ion HGTG18N120BND is based on Non− Pu nch Through (NPT) IGBT designs.
The IGB T is ideal for many high voltage switch ing applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inv erter, motor control and power supplies .
Features
• 26 A, 1200 V, TC = 110° C
• Low Saturation Voltage: VCE(sat) = 2.
45 V @ IC = 18 A
• Typical Fall T ime .
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140 ns at TJ = 150°C
• Short Circuit Rating Low Conduction Loss
• This Device is Pb−Free www.
onsemi.
com C G E E C G TO−247−3LD CASE 340CK MARKING .
Manufacture ON Semiconductor
Datasheet
Download HGTG18N120BND Datasheet
Part HGTG18N120BND
Description IGBT
Feature IGBT - NPT 1200 V HGTG18N120BND Descript ion HGTG18N120BND is based on Non− Pu nch Through (NPT) IGBT designs.
The IGB T is ideal for many high voltage switch ing applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inv erter, motor control and power supplies .
Features
• 26 A, 1200 V, TC = 110° C
• Low Saturation Voltage: VCE(sat) = 2.
45 V @ IC = 18 A
• Typical Fall T ime .
.
.
.
.
.
.
.
.
.
.
.
.
140 ns at TJ = 150°C
• Short Circuit Rating Low Conduction Loss
• This Device is Pb−Free www.
onsemi.
com C G E E C G TO−247−3LD CASE 340CK MARKING .
Manufacture ON Semiconductor
Datasheet
Download HGTG18N120BND Datasheet

HGTG18N120BND

HGTG18N120BND
HGTG18N120BND

HGTG18N120BND

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