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AFGHL50T65SQDC Datasheet, Equivalent, Hybrid IGBT.

Hybrid IGBT

Hybrid IGBT

 

 

 

Part AFGHL50T65SQDC
Description Hybrid IGBT
Feature Hybrid IGBT, 50 A, 650 V AFGHL50T65 SQDC Using the novel field stop 4th ge neration IGBT technology and the 1.
5th generation SiC Schottky Diode technolog y, AFGHL50T65SQDC offers the optimum pe rformance with both low conduction and switching losses for high efficiency op erations in various applications, espec ially totem pole bridgeless PFC and Inv erter.
Features
• AEC−Q101 Qualifi ed
• Maximum Junction Temperature : T J = 175°C
• Positive Temperature Co efficient for Easy Parallel Operating
• High Current Capability
• Low Sa turation Voltage: VCE(Sat) = 1.
6 V (Typ .
) @IC = 50 A
• Fast Switching
• .
Manufacture ON Semiconductor
Datasheet
Download AFGHL50T65SQDC Datasheet
Part AFGHL50T65SQDC
Description Hybrid IGBT
Feature Hybrid IGBT, 50 A, 650 V AFGHL50T65 SQDC Using the novel field stop 4th ge neration IGBT technology and the 1.
5th generation SiC Schottky Diode technolog y, AFGHL50T65SQDC offers the optimum pe rformance with both low conduction and switching losses for high efficiency op erations in various applications, espec ially totem pole bridgeless PFC and Inv erter.
Features
• AEC−Q101 Qualifi ed
• Maximum Junction Temperature : T J = 175°C
• Positive Temperature Co efficient for Easy Parallel Operating
• High Current Capability
• Low Sa turation Voltage: VCE(Sat) = 1.
6 V (Typ .
) @IC = 50 A
• Fast Switching
• .
Manufacture ON Semiconductor
Datasheet
Download AFGHL50T65SQDC Datasheet

AFGHL50T65SQDC

AFGHL50T65SQDC
AFGHL50T65SQDC

AFGHL50T65SQDC

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