NGTB30N120FL2WG

NGTB30N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 ms Short Circuit Capability This is a Pb−Free Device Typical Applications Solar Inverter Uninterruptible Power Supplies (UPS) Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 1200 V IC A 60 30 Pulsed collector current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 15 V Diode forward current @ TC = 25°C @ TC = 100°C ICM 120 A IF A 60 30 Diode pulsed current, Tpulse limited IFM by TJmax Gate−emitter voltage VGE Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) 120 A $20 V ±30 Power Dissipation @ TC = 25°C @ TC = 100°C PD W 452 227 Short Circuit Withstand Time TSC VGE = 15 V, VCE = 500 V, TJ ≤ 150°C Operating junction temperature TJ range 10 ms −55 to +175 °C Storage temperature range Lead temperature for soldering, 1/8” from case for 5 ...