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NGTB30N120FL2WG Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part NGTB30N120FL2WG
Description IGBT
Feature NGTB30N120FL2WG IGBT - Field Stop II Th is Insulated Gate Bipolar Transistor (I GBT) features a robust and cost effecti ve Field Stop II Trench construction, a nd provides superior performance in dem anding switching applications, offering both low on state voltage and minimal switching loss.
The IGBT is well suited for UPS and solar applications.
Incorp orated into the device is a soft and fa st co−packaged free wheeling diode wi th a low forward voltage.
Features
• Extremely Efficient Trench with Field S top Technology
• TJmax = 175°C
• S oft Fast Reverse Recovery Diode
• Opt imized for High Speed Swi .
Manufacture ON Semiconductor
Datasheet
Download NGTB30N120FL2WG Datasheet
Part NGTB30N120FL2WG
Description IGBT
Feature NGTB30N120FL2WG IGBT - Field Stop II Th is Insulated Gate Bipolar Transistor (I GBT) features a robust and cost effecti ve Field Stop II Trench construction, a nd provides superior performance in dem anding switching applications, offering both low on state voltage and minimal switching loss.
The IGBT is well suited for UPS and solar applications.
Incorp orated into the device is a soft and fa st co−packaged free wheeling diode wi th a low forward voltage.
Features
• Extremely Efficient Trench with Field S top Technology
• TJmax = 175°C
• S oft Fast Reverse Recovery Diode
• Opt imized for High Speed Swi .
Manufacture ON Semiconductor
Datasheet
Download NGTB30N120FL2WG Datasheet

NGTB30N120FL2WG

NGTB30N120FL2WG
NGTB30N120FL2WG

NGTB30N120FL2WG

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