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FGH4L40T120LQD Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FGH4L40T120LQD
Description IGBT
Feature IGBT - Ultra Field Stop 1200 V, 40 A, VC E(Sat) = 1.
55V, TO247 4L FGH4L40T120LQD This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost−ef fective Ultra Field Stop Trench constru ction, and provides superior performanc e in demanding switching applications, offering both low on−state voltage an d minimal switching loss.
The IGBT is w ell suited for motor driver application s.
Incorporated into the device is a so ft and fast co−packaged free−wheeli ng diode with a low forward voltage.
F eatures
• Extremely Efficient Trench with Field Stop Technology
• Maximum Junction Temperature: TJ = .
Manufacture ON Semiconductor
Datasheet
Download FGH4L40T120LQD Datasheet
Part FGH4L40T120LQD
Description IGBT
Feature IGBT - Ultra Field Stop 1200 V, 40 A, VC E(Sat) = 1.
55V, TO247 4L FGH4L40T120LQD This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost−ef fective Ultra Field Stop Trench constru ction, and provides superior performanc e in demanding switching applications, offering both low on−state voltage an d minimal switching loss.
The IGBT is w ell suited for motor driver application s.
Incorporated into the device is a so ft and fast co−packaged free−wheeli ng diode with a low forward voltage.
F eatures
• Extremely Efficient Trench with Field Stop Technology
• Maximum Junction Temperature: TJ = .
Manufacture ON Semiconductor
Datasheet
Download FGH4L40T120LQD Datasheet

FGH4L40T120LQD

FGH4L40T120LQD
FGH4L40T120LQD

FGH4L40T120LQD

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