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AFGB30T65SQDN Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part AFGB30T65SQDN
Description IGBT
Feature AFGB30T65SQDN IGBT for Automotive Appli cations 650 V, 30 A, D2PAK Features Maximum Junction Temperature: TJ = 17 5°C
• High Speed Switching Series VCE(sat) = 1.
6 V (typ.
) @ IC = 30 A Low VF Soft Recovery Co−packaged D iode
• AEC−Q101 Qualified
• 100% of the Parts are Dynamically Tested (No te 1) Typical Applications
• Automoti ve On Board Charger
• Automotive DC/D C Converter for HEV MAXIMUM RATINGS (T C = 25°C unless otherwise stated) Par ameter Symbol Value Unit Collector− to−Emitter Voltage Gate−to−Emitte r Voltage Transient Gate−to−Emitter Voltage Collector Current (TC = 25°C) Collector .
Manufacture ON Semiconductor
Datasheet
Download AFGB30T65SQDN Datasheet
Part AFGB30T65SQDN
Description IGBT
Feature AFGB30T65SQDN IGBT for Automotive Appli cations 650 V, 30 A, D2PAK Features Maximum Junction Temperature: TJ = 17 5°C
• High Speed Switching Series VCE(sat) = 1.
6 V (typ.
) @ IC = 30 A Low VF Soft Recovery Co−packaged D iode
• AEC−Q101 Qualified
• 100% of the Parts are Dynamically Tested (No te 1) Typical Applications
• Automoti ve On Board Charger
• Automotive DC/D C Converter for HEV MAXIMUM RATINGS (T C = 25°C unless otherwise stated) Par ameter Symbol Value Unit Collector− to−Emitter Voltage Gate−to−Emitte r Voltage Transient Gate−to−Emitter Voltage Collector Current (TC = 25°C) Collector .
Manufacture ON Semiconductor
Datasheet
Download AFGB30T65SQDN Datasheet

AFGB30T65SQDN

AFGB30T65SQDN
AFGB30T65SQDN

AFGB30T65SQDN

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