NGTB25N120SWG

NGTB25N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 ms Short Circuit Capability These are Pb−Free Devices Typical Applications Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 1200 V IC A 50 25 Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C ICM 100 A IF A 50 25 Diode pulsed current, Tpulse limited IFM by TJmax Gate−emitter voltage VGE Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) 100 A $20 V ±30 Power Dissipation @ TC = 25°C @ TC = 100°C PD W 385 192 Short Circuit Withstand Time TSC VGE = 15 V, VCE = 500 V, TJ ≤ 150°C Operating junction temperature TJ range 10 ms −55 to +175 °C Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Tstg TSLD −55 to +175 °C 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are...