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NGTB30N120L2WG Dataheets PDF



Part Number NGTB30N120L2WG
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description IGBT
Datasheet NGTB30N120L2WG DatasheetNGTB30N120L2WG Datasheet (PDF)

NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features • Extremely Efficient Trench with Fiel.

  NGTB30N120L2WG   NGTB30N120L2WG


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