FGHL40T65MQD

Field Stop Trench IGBT 650 V, 40 A FGHL40T65MQD Field stop 4th generation mid speed IGBT technology and full current rated copak Diode technology. Features Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.45 V (Typ.) @ IC = 40 A 100% of the Parts are Tested for ILM (Note 2) Smooth & Optimized Switching Tight Parameter Distribution RoHS Compliant Typical Applications Solar Inverter UPS, ESS PFC, Converters MAXIMUM RATINGS Parameter Symbol Value Unit Collector−to−Emitter Voltage VCES 650 V Gate−to−Emitter Voltage VGES ±20 V Transient Gate−to−Emitter Voltage VGES ±30 V Collector Current (Note 1) TC = 25°C IC 80 A TC = 100°C 40 Pulsed Collector Current (Note 2) ILM 160 A Pulsed Collector Current (Note 3) ICM 160 A Diode Forward Current (Note 1) TC = 25°C IF 40 A TC = 65°C 25 Pulsed Diode Maximum Forward Current IFM 160 A Non−Repetitive Forward Surge Current (Half−Sine Pulse, tp = 8.3 ms, TC = 25°C) (Half−Sine Pulse, tp = 8.3 ms, TC = 150°C) IF,SM A 85 80 Maximum Power Dissipation TC = 25°C PD 238 W TC = 100°C 119 Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Maximum Lead Temperature for Soldering Purposes (1/8″ from case for 5 s) TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, de...