Document
IGBT - Field Stop, Trench
650 V, 75 A
FGH75T65SQDT
Description Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Features
• Max Junction Temperature TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A • 100% of the Parts Tested for ILM • High Input Impedance • Fast Switching • Tighten Parameter Distribution • This Device is Pb−Free and is RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
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VCES 650 V
IC 75 A
C
G E
E C G
COLLECTOR (FLANGE)
TO−247−3LD CASE 340CH
MARKING DIAGRAM
$Y&Z&3&K FGH75T65 SQDT
© Semiconductor Components Industries, LLC, 2017
November, 2019 − Rev. 3
$Y &Z &3 &K FGH75T65SQDT
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
1
Publication Order Number:
FGH75T65SQDT/D
FGH75T65SQDT
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
FGH50T65SQD−F155
Unit
VCES VGES
Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage
650
V
±20
V
±30
V
IC
Collector Current
TC = 25°C
150
A
TC = 100°C
75
A
ILM (Note 1) Pulsed Collector Current
TC = 25°C
300
A
ICM (Note 2) Pulsed Collector Current
300
A
IF
Diode Forward Current
TC = 25°C
150
A
Diode Forward Current
TC = 100°C
75
A
IFM
Pulsed Diode Maximum Forward Current
300
A
PD
Maximum Power Dissipation
TC = 25°C
375
W
TC = 100°C
188
W
TJ
Operating Junction Temperature
−55 to +175
°C
TSTG
Storage Temperature Range
−55 to +175
°C
TL
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 21 W, Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC (IGBT) RqJC (Diode)
RqJA
Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.
FGH75T65SQDT−F155 0.4 0.65 40
Unit _C/W _C/W _C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number FGH75T65SQDT−F155
Top Mark FGH75T65SQDT
Package TO−247−3LD
Packing Method
Tube
Reel Size −
Tape Width −
Qty per Tube 30
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FGH75T65SQDT
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
OFF CHARACTERISTICS
BVCES
Collector to Emitter Breakdown Voltage
VGE = 0 V, IC = 1 mA
650
DBVCES / DTJ Temperature Coefficient of Breakdown Voltage IC = 1 mA, Reference to 25°C −
ICES
Collector Cut−Off Current
IGES
G−E Leakage Current
ON CHARACTERISTICS
VCE = VCES, VGE = 0 V
−
VGE = VGES, VCE = 0 V
−
VGE(th) VCE(sat)
G−E Threshold Voltage Collector to Emitter Saturation Voltage
IC = 75 mA, VCE = VGE
2.6
IC = 75 A, VGE = 15 V,
−
TC = 25 °C
IC = 75 A, VGE = 15 V,
−
TC = 175°C
DYNAMIC CHARACTERISTICS
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
VCE = 30 V, VGE = 0 V,
−
f = 1MHz
−
−
Td(on) Tr
Td(off) Tf Eon Eoff Ets
Td(on) Tr
Td(off) Tf Eon Eoff Ets
Td(on) Tr
Td(off) Tf
Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Switching Loss Turn−Off Switching Loss Total Switching Loss Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Switching Loss Turn−Off Switching Loss Total Switching Loss Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time
VCC = 400 V, IC = 18.8 A,
−
RG = 4.7 W, VGE = 15 V,
Inductive Load, TC = 25°C
−
−
−
−
−
−
VCC = 400 V, IC = 37,5 A,
−
RG = 4.7 W, VGE = 15 V,
Inductive Load, TC = 25°C
−
−
−
−
−
−
VCC = 400 V, IC = 18.5 A,
−
RG = 4.7 W, VGE = 15 V,
Inductive Load, TC = 175°C
−
−
−
Eon
Turn−On Switching Loss
−
Eoff
Turn−Off Switching Loss
−
Ets
Total Switching Loss
−
Typ
Max
−
−
0.6
−
−
250
−
±400
4.5
6.4
1.6
2.1
1.92
−
4845
−
155
−
14
−
23
−
10
−
120
−
7
−
300
−
70
−
370
−
26
−
19
−
114
−
11
−
746
−
181
−
927
−
22
−
12
−
135
−
14
−
760
−
180
−
940
−
Unit
V V/°C mA nA
V V
V
pF pF pF
ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ
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F.