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FGH75T65SQDT Dataheets PDF



Part Number FGH75T65SQDT
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description IGBT
Datasheet FGH75T65SQDT DatasheetFGH75T65SQDT Datasheet (PDF)

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQDT Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Max Junction Temperature TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.6 .

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IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQDT Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Max Junction Temperature TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A • 100% of the Parts Tested for ILM • High Input Impedance • Fast Switching • Tighten Parameter Distribution • This Device is Pb−Free and is RoHS Compliant Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC www.onsemi.com VCES 650 V IC 75 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FGH75T65 SQDT © Semiconductor Components Industries, LLC, 2017 November, 2019 − Rev. 3 $Y &Z &3 &K FGH75T65SQDT = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FGH75T65SQDT/D FGH75T65SQDT ABSOLUTE MAXIMUM RATINGS Symbol Description FGH50T65SQD−F155 Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage 650 V ±20 V ±30 V IC Collector Current TC = 25°C 150 A TC = 100°C 75 A ILM (Note 1) Pulsed Collector Current TC = 25°C 300 A ICM (Note 2) Pulsed Collector Current 300 A IF Diode Forward Current TC = 25°C 150 A Diode Forward Current TC = 100°C 75 A IFM Pulsed Diode Maximum Forward Current 300 A PD Maximum Power Dissipation TC = 25°C 375 W TC = 100°C 188 W TJ Operating Junction Temperature −55 to +175 °C TSTG Storage Temperature Range −55 to +175 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 21 W, Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter RqJC (IGBT) RqJC (Diode) RqJA Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FGH75T65SQDT−F155 0.4 0.65 40 Unit _C/W _C/W _C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number FGH75T65SQDT−F155 Top Mark FGH75T65SQDT Package TO−247−3LD Packing Method Tube Reel Size − Tape Width − Qty per Tube 30 www.onsemi.com 2 FGH75T65SQDT ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min OFF CHARACTERISTICS BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 650 DBVCES / DTJ Temperature Coefficient of Breakdown Voltage IC = 1 mA, Reference to 25°C − ICES Collector Cut−Off Current IGES G−E Leakage Current ON CHARACTERISTICS VCE = VCES, VGE = 0 V − VGE = VGES, VCE = 0 V − VGE(th) VCE(sat) G−E Threshold Voltage Collector to Emitter Saturation Voltage IC = 75 mA, VCE = VGE 2.6 IC = 75 A, VGE = 15 V, − TC = 25 °C IC = 75 A, VGE = 15 V, − TC = 175°C DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance SWITCHING CHARACTERISTICS VCE = 30 V, VGE = 0 V, − f = 1MHz − − Td(on) Tr Td(off) Tf Eon Eoff Ets Td(on) Tr Td(off) Tf Eon Eoff Ets Td(on) Tr Td(off) Tf Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Switching Loss Turn−Off Switching Loss Total Switching Loss Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Switching Loss Turn−Off Switching Loss Total Switching Loss Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time VCC = 400 V, IC = 18.8 A, − RG = 4.7 W, VGE = 15 V, Inductive Load, TC = 25°C − − − − − − VCC = 400 V, IC = 37,5 A, − RG = 4.7 W, VGE = 15 V, Inductive Load, TC = 25°C − − − − − − VCC = 400 V, IC = 18.5 A, − RG = 4.7 W, VGE = 15 V, Inductive Load, TC = 175°C − − − Eon Turn−On Switching Loss − Eoff Turn−Off Switching Loss − Ets Total Switching Loss − Typ Max − − 0.6 − − 250 − ±400 4.5 6.4 1.6 2.1 1.92 − 4845 − 155 − 14 − 23 − 10 − 120 − 7 − 300 − 70 − 370 − 26 − 19 − 114 − 11 − 746 − 181 − 927 − 22 − 12 − 135 − 14 − 760 − 180 − 940 − Unit V V/°C mA nA V V V pF pF pF ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ www.onsemi.com 3 F.


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