FGHL50T65MQDTL4

Field Stop Trench IGBT 650 V, 50 A FGHL50T65MQDTL4 Field stop 4th generation mid speed IGBT technology copacked with full rated current diode. Features Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 50 A 100% of the Parts are Tested for ILM (Note 2) Smooth and Optimized Switching Tight Parameter Distribution RoHS Compliant Typical Applications Solar Inverter UPS, ESS PFC, Converters MAXIMUM RATINGS Parameter Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 650 V VGES ±20 V ±30 Collector Current (Note 1) @ TC = 25°C @ TC = 100°C IC 80 A 50 Pulsed Collector Current (Note 2) ILM 200 A Pulsed Collector Current (Note 3) ICM 200 A Diode Forward Current (Note 1) @ TC = 25°C IF 60 A @ TC = 100°C 50 Pulsed Diode Maximum Forward Current IFM 200 A Maximum Power Dissipation @ TC = 25°C @ TC = 100°C PD 268 W 134 Operating Junction and Storage Temperature Range TJ, −55 to °C TSTG +175 Maximum Lead Temp. for Soldering Purposes (1/8″ from case for 5 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire 2. VCC = 400 V, VGE = 15 V, I...