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FGH40T65SPD Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FGH40T65SPD
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 40 A FG H40T65SPD Description Using novel field stop IGBT technology, ON Semiconductor ’s new series of field stop 3rd gener ation IGBTs offer the optimum performan ce for solar inverter, UPS, welder, tel ecom, ESS and PFC applications where lo w conduction and switching losses are e ssential.
Features
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for Easy Par allel Operating
• High Current Capabi lity
• Low Saturation Voltage: VCE(sa t) = 1.
85 V (Typ.
) @ IC = 40 A
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• .
Manufacture ON Semiconductor
Datasheet
Download FGH40T65SPD Datasheet
Part FGH40T65SPD
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 40 A FG H40T65SPD Description Using novel field stop IGBT technology, ON Semiconductor ’s new series of field stop 3rd gener ation IGBTs offer the optimum performan ce for solar inverter, UPS, welder, tel ecom, ESS and PFC applications where lo w conduction and switching losses are e ssential.
Features
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for Easy Par allel Operating
• High Current Capabi lity
• Low Saturation Voltage: VCE(sa t) = 1.
85 V (Typ.
) @ IC = 40 A
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• .
Manufacture ON Semiconductor
Datasheet
Download FGH40T65SPD Datasheet

FGH40T65SPD

FGH40T65SPD
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