FGH60N60SMD-F085

IGBT - Field Stop 600 V, 60 A FGH60N60SMD-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential. Features Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A High Input Impedance Tightened Parameter Distribution This Device is Pb−Free and is RoHS Compliant Qualified to Automotive Requirements of AEC−Q101 Applications Automotive Chargers, Converters, High Voltage Auxiliaries Solar Inverters, UPS, SMPS, PFC www.onsemi.com VCES 600 V IC 60 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH60N60 SMD © Semiconductor Components Industries, LLC, 2013 January, 2020 − Rev. 4 $Y &Z &3 &K FGH60N60SMD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FGH60N60SMD−F085/D FGH60N60SMD−F085 ABSOLUTE MAXIMUM RATINGS Symbol Description Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ±20 V IC Collector Current TC = 25°C 120 A TC = 100°C 60 A ICM (Note 1) P...