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HGT1S7N60A4S9A Datasheet, Equivalent, N-Channel IGBT.

N-Channel IGBT

N-Channel IGBT

 

 

 

Part HGT1S7N60A4S9A
Description N-Channel IGBT
Feature HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 D ata Sheet September 2004 600V, SMPS S eries N-Channel IGBT The HGT1S7N60A4S9A , HGTG7N60A4 and HGTP7N60A4 are MOS gat ed high voltage switching devices combi ning the best features of MOSFETs and b ipolar transistors.
These devices have the high input impedance of a MOSFET an d the low on-state conduction loss of a bipolar transistor.
The much lower on- state voltage drop varies only moderate ly between 25oC and 150oC.
This IGBT is ideal for many high voltage switching applications operating at high frequenc ies where low conduction losses are ess ential.
This d .
Manufacture ON Semiconductor
Datasheet
Download HGT1S7N60A4S9A Datasheet
Part HGT1S7N60A4S9A
Description N-Channel IGBT
Feature HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 D ata Sheet September 2004 600V, SMPS S eries N-Channel IGBT The HGT1S7N60A4S9A , HGTG7N60A4 and HGTP7N60A4 are MOS gat ed high voltage switching devices combi ning the best features of MOSFETs and b ipolar transistors.
These devices have the high input impedance of a MOSFET an d the low on-state conduction loss of a bipolar transistor.
The much lower on- state voltage drop varies only moderate ly between 25oC and 150oC.
This IGBT is ideal for many high voltage switching applications operating at high frequenc ies where low conduction losses are ess ential.
This d .
Manufacture ON Semiconductor
Datasheet
Download HGT1S7N60A4S9A Datasheet

HGT1S7N60A4S9A

HGT1S7N60A4S9A
HGT1S7N60A4S9A

HGT1S7N60A4S9A

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