HGTG7N60A4

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49331. Features >100kHz Operation at 390V, 7A 200kHz Operation at 390V, 5A 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at TJ = 125oC Low Conduction Loss Ordering Information PART NUMBER PACKAGE BRAND HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4 TO-263AB TO-247 TO-220AB G7N60A4 G7N60A4 G7N60A4 NOTE: When ordering, use the entire part number. Symbol C G Packaging JEDEC STYLE TO-247 E C G COLLECTOR (BOTTOM SIDE METAL) E JEDEC TO-220AB E C G COLLECTOR (FLANGE) JEDEC TO-263AB COLLECTOR G (FLANGE) E ©2004 Semiconductor Components Industries, LLC. November-2017, Rev. 2 Publication Order Number: HGTP7N60A4/D HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emi...