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NCD57090A Dataheets PDF



Part Number NCD57090A
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description IGBT/MOSFET Gate Driver
Datasheet NCD57090A DatasheetNCD57090A Datasheet (PDF)

Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y (x = D or V, y = A, B, C, D, E or F) NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A/D/F), negative power supply (version B) and separate high and l.

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Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y (x = D or V, y = A, B, C, D, E or F) NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A/D/F), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C/E) for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in wide−body SOIC−8 package. Features • High Peak Output Current (+6.5 A/−6.5 A) • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A/D/F) • Short Propagation Delays with Accurate Matching • IGBT/MOSFET Gate Clamping during Short Circuit • IGBT/MOSFET Gate Active Pull Down • Tight UVLO Thresholds for Bias Flexibility • Wide Bias Voltage Range including Negative VEE2 (Version B) • 3.3 V, 5 V, and 15 V Logic Input • 5 kVrms Galvanic Isolation • High Transient Immunity • High Electromagnetic Immunity • NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Motor Control • Uninterruptible Power Supplies (UPS) • Automotive Applications • Industrial Power Supplies • Solar Inverters DATA SHEET www.onsemi.com SOIC8 WB CASE 751EW MARKING DIAGRAM 8 5709zy AWLYYWW G 1 5709zy A WL YY WW G = Specific Device Code z = 0/1 y = A/B/C/D/E/F = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package PIN CONNECTIONS See detailed pin connection information on page 2 of this data sheet. ORDERING INFORMATION See detailed ordering and shipping information on page 23 of this data sheet. © Semiconductor Components Industries, LLC, 2019 1 June, 2022 − Rev. 2 Publication Order Number: NCD57090A/D VDD1 IN+ IN− GND1 GND2 CLAMP OUT VDD2 NCx57090A, NCx57091A VDD1 IN+ IN− GND1 NCx57090D NOTE: x = D or V CLAMP OUT VDD2 GND2 NCx57090y, NCx57091y PIN CONNECTIONS VDD1 IN+ IN− GND1 VEE2 GND2 OUT VDD2 NCx57090B, NCx57091B VDD1 IN+ IN− GND1 NCx57090E OUTL OUTH VDD2 GND2 Figure 1. Pin Connections VDD1 IN+ IN− GND1 GND2 OUTL OUTH VDD2 NCx57090C, NCx57091C VDD1 IN+ IN− GND1 NCx57090F VDD2 OUT CLAMP GND2 BLOCK DIAGRAM AND APPLICATION SCHEMATIC − VERSION A/D/F VDD1 IN− VDD1 UVLO1 VDD2 UVLO2 VDD2 OUT IN+ GND1 1 Logic Logic 2 + VCLAMP−THR − CLAMP Figure 2. Simplified Block Diagram, NCD57090A/D/F GND2 2 VDD1 VDD1 IN+ VDD2 VDD2 OUT IN− CLAMP GND1 GND2 Figure 3. Simplified Application Schematics, Version A/D/F www.onsemi.com 2 NCx57090y, NCx57091y BLOCK DIAGRAM AND APPLICATION SCHEMATIC − NCx57090B, NCx57091B VDD1 IN− VDD1 UVLO1 VDD2 UVLO2 VDD2 OUT IN+ GND1 1 Logic Logic VEE2 GND2 2 Figure 4. Simplified Block Diagram, NCx57090B, NCx57091B VDD1 VDD1 IN+ VDD2 VDD2 OUT IN− GND2 GND1 VEE2 Figure 5. Simplified Application Schematics, NCx57090B, NCx57091B www.onsemi.com 3 NCx57090y, NCx57091y BLOCK DIAGRAM AND APPLICATION SCHEMATIC − VERSION C/E VDD1 IN− VDD1 UVLO1 IN+ GND1 1 Logic VDD2 UVLO2 Logic VDD2 OUTH OUTL GND2 2 Figure 6. Simplified Block Diagram, Version C/E VDD1 VDD1 IN+ VDD2 VDD2 OUTH IN− OUTL GND1 GND2 Figure 7. Simplified Application Schematics, Version C/E www.onsemi.com 4 NCx57090y, NCx57091y Table 1. FUNCTION DESCRIPTION Pin Name No. I/O Description VDD1 1 Power Input side power supply. A good quality bypassing capacitor is required from this pin to GND1 and should be placed close to the pins for best results. The under voltage lockout (UVLO) circuit enables the device to operate at power on when a typical supply voltage higher than VUVLO1−OUT−ON is present. Please see Figures 9A and 9B for more details. IN+ 2 I Non inverted gate driver input. It is internally clamped to GND1 and has an equivalent pull−down resistor of 125 kW to ensure that output is low in the absence of an input signal. A minimum positive or negative pulse−width is required at IN+ before OUT or OUTH/OUTL responds. IN− 3 I Inverted gate driver input. It is internally clamped to VDD1 and has an equivalent pull−up resistor of 50 kW to ensure that output is low in the absence of an input signal. A minimum positive or negative pulse−width is required at IN− before OUT or OUTH/OUTL responds. GND1 4 Power Input side ground reference. VDD2 5 Power Output side positive power supply. The operating range for this pin is from UVLO2 to its maximum allowed value. A good quality bypassing capacitor is required from this pin to GND2.


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