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FGH12040WD Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FGH12040WD
Description IGBT
Feature IGBT - Field Stop, Trench 1200 V, 40 A F GH12040WD Description Using novel field stop IGBT technology, ON Semiconductor ’s new series of field stop 2nd gener ation IGBTs offer the optimum performan ce for welder applications where low co nduction and switching losses are essen tial.
Features
• Maximum Junction Tem perature: TJ =175°C
• Positive Tempe rature Co−efficient for Easy Parallel Operating
• Low Saturation Voltage: VCE(sat) = 2.
3 V (Typ.
) @ IC = 40 A
• 100% of the Parts Tested for ILM (Note 1)
• Short Circuit Ruggedness > 5 us @ 150°C
• High Input Impedance
• This Device is Pb−Free and is RoHS .
Manufacture ON Semiconductor
Datasheet
Download FGH12040WD Datasheet
Part FGH12040WD
Description IGBT
Feature IGBT - Field Stop, Trench 1200 V, 40 A F GH12040WD Description Using novel field stop IGBT technology, ON Semiconductor ’s new series of field stop 2nd gener ation IGBTs offer the optimum performan ce for welder applications where low co nduction and switching losses are essen tial.
Features
• Maximum Junction Tem perature: TJ =175°C
• Positive Tempe rature Co−efficient for Easy Parallel Operating
• Low Saturation Voltage: VCE(sat) = 2.
3 V (Typ.
) @ IC = 40 A
• 100% of the Parts Tested for ILM (Note 1)
• Short Circuit Ruggedness > 5 us @ 150°C
• High Input Impedance
• This Device is Pb−Free and is RoHS .
Manufacture ON Semiconductor
Datasheet
Download FGH12040WD Datasheet

FGH12040WD

FGH12040WD
FGH12040WD

FGH12040WD

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