FGH12040WD

IGBT - Field Stop, Trench 1200 V, 40 A FGH12040WD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for welder applications where low conduction and switching losses are essential. Features Maximum Junction Temperature: TJ =175°C Positive Temperature Co−efficient for Easy Parallel Operating Low Saturation Voltage: VCE(sat) = 2.3 V (Typ.) @ IC = 40 A 100% of the Parts Tested for ILM (Note 1) Short Circuit Ruggedness > 5 us @ 150°C High Input Impedance This Device is Pb−Free and is RoHS Compliant Applications Only for Welder www.onsemi.com C G E E C G TO−247 long leads CASE 340CH MARKING DIAGRAM $Y&Z&3&K FGH12040 WD © Semiconductor Components Industries, LLC, 2014 April, 2020 − Rev. 4 $Y &Z &3 &K FGH12040WD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FGH12040WD−F155/D FGH12040WD ABSOLUTE MAXIMUM RATINGS Symbol Description FGH75T65SHDTL4 Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage 1200 V ±25 V ±30 V IC Collector Current TC = 25°C 80 A TC = 100°C 40 A ILM (Note 1) Clamped Inductive Load Current TC = 25°C 100 A ICM (Note 2) Pulsed Collector Current 100 A IF Diode Continuous Forward Current TC = ...