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FGH30S130P Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FGH30S130P
Description IGBT
Feature IGBT - Shorted-Anode 1300 V, 30 A FGH30S 130P Description Using advanced field s top trench and shorted−anode technolo gy, ON Semiconductor’s shorted−anod e trench IGBTs offer superior conductio n and switching performances for soft s witching applications.
The device can o perate in parallel configuration with e xceptional avalanche capability.
This d evice is designed for induction heating and microwave oven.
Features
• High Speed Switching
• Low Saturation Volt age: VCE(sat) =1.
75 V @ IC = 30 A
• H igh Input Impedance
• This Device is Pb−Free and is RoHS Compliant Applica tions
• Induction Heating, Mic .
Manufacture ON Semiconductor
Datasheet
Download FGH30S130P Datasheet
Part FGH30S130P
Description IGBT
Feature IGBT - Shorted-Anode 1300 V, 30 A FGH30S 130P Description Using advanced field s top trench and shorted−anode technolo gy, ON Semiconductor’s shorted−anod e trench IGBTs offer superior conductio n and switching performances for soft s witching applications.
The device can o perate in parallel configuration with e xceptional avalanche capability.
This d evice is designed for induction heating and microwave oven.
Features
• High Speed Switching
• Low Saturation Volt age: VCE(sat) =1.
75 V @ IC = 30 A
• H igh Input Impedance
• This Device is Pb−Free and is RoHS Compliant Applica tions
• Induction Heating, Mic .
Manufacture ON Semiconductor
Datasheet
Download FGH30S130P Datasheet

FGH30S130P

FGH30S130P
FGH30S130P

FGH30S130P

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