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FGH40N60SMDF Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FGH40N60SMDF
Description IGBT
Feature IGBT - Field Stop 600 V, 40 A FGH40N60SM DF Description Using Novel Field Stop I GBT Technology, ON Semiconductor’s ne w series of field stop 2nd generation I GBTs offer the optimum performance for solar inverter, UPS, welder, telecom, E SS and PFC applications where low condu ction and switching losses are essentia l.
Features
• Maximum Junction Temper ature: TJ = 175°C
• Positive Tempera ture Co−efficient for Easy Parallel O perating
• High Current Capability Low Saturation Voltage: VCE(sat) = 1.
9 V (Typ.
) @ IC = 40 A
• High Input I mpedance
• Fast Switching: EOFF = 6.
5 mJ/A
• Tightened Parameter Dis .
Manufacture ON Semiconductor
Datasheet
Download FGH40N60SMDF Datasheet
Part FGH40N60SMDF
Description IGBT
Feature IGBT - Field Stop 600 V, 40 A FGH40N60SM DF Description Using Novel Field Stop I GBT Technology, ON Semiconductor’s ne w series of field stop 2nd generation I GBTs offer the optimum performance for solar inverter, UPS, welder, telecom, E SS and PFC applications where low condu ction and switching losses are essentia l.
Features
• Maximum Junction Temper ature: TJ = 175°C
• Positive Tempera ture Co−efficient for Easy Parallel O perating
• High Current Capability Low Saturation Voltage: VCE(sat) = 1.
9 V (Typ.
) @ IC = 40 A
• High Input I mpedance
• Fast Switching: EOFF = 6.
5 mJ/A
• Tightened Parameter Dis .
Manufacture ON Semiconductor
Datasheet
Download FGH40N60SMDF Datasheet

FGH40N60SMDF

FGH40N60SMDF
FGH40N60SMDF

FGH40N60SMDF

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