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NGTB30N140IHR3WG Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part NGTB30N140IHR3WG
Description IGBT
Feature IGBT with Monolithic Free Wheeling Diode NGTB30N140IHR3WG This Insulated Gate Bipolar Transistor (IGBT) features a ro bust and cost effective ultra Field Sto p (FS) Trench construction and provides superior performance.
It is especially designed for low on−state and is wel l suited for resonant or soft switching topologies, such as those used in indu ctive heating applications.
The device contains a reverse conducting diode int egrated on the same die, which makes th e device construction very cost effecti ve.
Features
• Extremely Efficient Tr ench with Ultra Field Stop Technology 1400 V Breakdown .
Manufacture ON Semiconductor
Datasheet
Download NGTB30N140IHR3WG Datasheet
Part NGTB30N140IHR3WG
Description IGBT
Feature IGBT with Monolithic Free Wheeling Diode NGTB30N140IHR3WG This Insulated Gate Bipolar Transistor (IGBT) features a ro bust and cost effective ultra Field Sto p (FS) Trench construction and provides superior performance.
It is especially designed for low on−state and is wel l suited for resonant or soft switching topologies, such as those used in indu ctive heating applications.
The device contains a reverse conducting diode int egrated on the same die, which makes th e device construction very cost effecti ve.
Features
• Extremely Efficient Tr ench with Ultra Field Stop Technology 1400 V Breakdown .
Manufacture ON Semiconductor
Datasheet
Download NGTB30N140IHR3WG Datasheet

NGTB30N140IHR3WG

NGTB30N140IHR3WG
NGTB30N140IHR3WG

NGTB30N140IHR3WG

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