IGBT
IGBT - Field Stop
600 V, 40 A
FGH40N60UF
Description Using novel field stop IGBT technology, onsemi’s field stop IGBTs
...
Description
IGBT - Field Stop
600 V, 40 A
FGH40N60UF
Description Using novel field stop IGBT technology, onsemi’s field stop IGBTs
offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch−ing losses are essential.
Features
High Current Capability Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A High Input Impedance Fast Switching These Device is Pb−Free and is RoHS Compliant
Applications
Solar Inverter, UPS, Welder, PFC
ABSOLUTE MAXIMUM RATINGS
Description
Symbol Value Unit
Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage
VCES
600
V
VGES
±20
V
±30
Collector Current
Collector Current
Pulsed Collector Current (Note 1)
TC = 25°C
IC
TC = 100°C
TC = 25°C
ICM
80
A
40
A
120
A
Maximum Power Dissipation TC = 25°C
PD
290
W
Maximum Power Dissipation TC = 100°C
116
W
Operating Junction Temperature
TJ
−55 to °C
+150
Storage Temperature Range
Tstg
−55to °C
+150
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
TL
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature.
DATA SHEET www.onsemi.com
EC G
COLLECTOR (FLANGE) TO−247−3LD CASE 340CK
MARKING DIAGRAMS
$Y&Z&3&K FGH40N60 UF
$Y &Z &3 &K FG...
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