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AFGHL30T65RQDN Datasheet, Equivalent, IGBT.

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Part AFGHL30T65RQDN
Description IGBT
Feature IGBT for Automotive Application 650 V, 3 0 A AFGHL30T65RQDN Using novel field st op IGBT technology, onsemi’s new seri es of FS4 IGBTs offer the optimum perfo rmance for automotive applications.
Thi s technology is Short circuit rated and offers high figure of merit with low c onduction and switching losses.
Feature s
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co− efficient for Easy Parallel Operation High Current Capability
• Low Satu ration Voltage: VCE(Sat) = 1.
57 V (Typ.
) @ IC = 30 A
• 100% of the Parts Tes ted for ILM (Note 2)
• High Input Imp edance
• Fast Switching
• Tight .
Manufacture ON Semiconductor
Datasheet
Download AFGHL30T65RQDN Datasheet
Part AFGHL30T65RQDN
Description IGBT
Feature IGBT for Automotive Application 650 V, 3 0 A AFGHL30T65RQDN Using novel field st op IGBT technology, onsemi’s new seri es of FS4 IGBTs offer the optimum perfo rmance for automotive applications.
Thi s technology is Short circuit rated and offers high figure of merit with low c onduction and switching losses.
Feature s
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co− efficient for Easy Parallel Operation High Current Capability
• Low Satu ration Voltage: VCE(Sat) = 1.
57 V (Typ.
) @ IC = 30 A
• 100% of the Parts Tes ted for ILM (Note 2)
• High Input Imp edance
• Fast Switching
• Tight .
Manufacture ON Semiconductor
Datasheet
Download AFGHL30T65RQDN Datasheet

AFGHL30T65RQDN

AFGHL30T65RQDN
AFGHL30T65RQDN

AFGHL30T65RQDN

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