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FGH40T65SHDF Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FGH40T65SHDF
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 40 A FG H40T65SHDF Description Using novel fiel d stop IGBT technology, ON Semiconducto r’s new series of field stop 3rd gene ration IGBTs offer superior conduction and switching performance and easy para llel operation.
This device is well sui ted for the resonant or soft switching application such as induction heating a nd MWO.
Features
• Maximum Junction T emperature: TJ = 175°C
• Positive Te mperature Co−efficient for Easy Paral lel Operating
• High Current Capabili ty
• Low Saturation Voltage: VCE(sat) = 1.
45 V(Typ.
) @ IC = 40 A
• 100% of the Parts Tested for ILM (No .
Manufacture ON Semiconductor
Datasheet
Download FGH40T65SHDF Datasheet
Part FGH40T65SHDF
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 40 A FG H40T65SHDF Description Using novel fiel d stop IGBT technology, ON Semiconducto r’s new series of field stop 3rd gene ration IGBTs offer superior conduction and switching performance and easy para llel operation.
This device is well sui ted for the resonant or soft switching application such as induction heating a nd MWO.
Features
• Maximum Junction T emperature: TJ = 175°C
• Positive Te mperature Co−efficient for Easy Paral lel Operating
• High Current Capabili ty
• Low Saturation Voltage: VCE(sat) = 1.
45 V(Typ.
) @ IC = 40 A
• 100% of the Parts Tested for ILM (No .
Manufacture ON Semiconductor
Datasheet
Download FGH40T65SHDF Datasheet

FGH40T65SHDF

FGH40T65SHDF
FGH40T65SHDF

FGH40T65SHDF

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