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FGAF40S65AQ Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FGAF40S65AQ
Description IGBT
Feature Field Stop Trench IGBT 650 V, 40 A FGAF4 0S65AQ Description Using novel field st op IGBT technology, ON Semiconductor’ s new series of field stop 4th generati on of RC IGBTs offer the optimum perfor mance for PFC applications and welder w here low conduction and switching losse s are essential.
Features
• Maximum J unction Temperature: TJ = 175°C
• Po sitive Temperature Co−efficient for E asy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.
6 V (Typ.
) @ IC = 40 A 100% of the Parts Tested for ILM (Not e 1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Dis .
Manufacture ON Semiconductor
Datasheet
Download FGAF40S65AQ Datasheet
Part FGAF40S65AQ
Description IGBT
Feature Field Stop Trench IGBT 650 V, 40 A FGAF4 0S65AQ Description Using novel field st op IGBT technology, ON Semiconductor’ s new series of field stop 4th generati on of RC IGBTs offer the optimum perfor mance for PFC applications and welder w here low conduction and switching losse s are essential.
Features
• Maximum J unction Temperature: TJ = 175°C
• Po sitive Temperature Co−efficient for E asy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.
6 V (Typ.
) @ IC = 40 A 100% of the Parts Tested for ILM (Not e 1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Dis .
Manufacture ON Semiconductor
Datasheet
Download FGAF40S65AQ Datasheet

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