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AFGB30T65RQDN Datasheet, Equivalent, IGBT.

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Part AFGB30T65RQDN
Description IGBT
Feature IGBT for Automotive Applications 650 V, 30 A AFGB30T65RQDN Using novel field st op IGBT technology, onsemi’s new seri es of FS4 IGBTs offer the optimum perfo rmance for automotive applications.
Thi s technology is Short circuit rated and offers high figure of merit with low c onduction and switching losses.
Feature s
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Coeff icient for Easy Parallel Operation
• High Current Capability
• Low Saturat ion Voltage: VCE(Sat) = 1.
58 V (Typ.
) @ IC = 30 A
• 100% of the Parts Tested for ILM (Note 2)
• High Input Impeda nce
• Fast Switching
• Tighte .
Manufacture ON Semiconductor
Datasheet
Download AFGB30T65RQDN Datasheet
Part AFGB30T65RQDN
Description IGBT
Feature IGBT for Automotive Applications 650 V, 30 A AFGB30T65RQDN Using novel field st op IGBT technology, onsemi’s new seri es of FS4 IGBTs offer the optimum perfo rmance for automotive applications.
Thi s technology is Short circuit rated and offers high figure of merit with low c onduction and switching losses.
Feature s
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Coeff icient for Easy Parallel Operation
• High Current Capability
• Low Saturat ion Voltage: VCE(Sat) = 1.
58 V (Typ.
) @ IC = 30 A
• 100% of the Parts Tested for ILM (Note 2)
• High Input Impeda nce
• Fast Switching
• Tighte .
Manufacture ON Semiconductor
Datasheet
Download AFGB30T65RQDN Datasheet

AFGB30T65RQDN

AFGB30T65RQDN
AFGB30T65RQDN

AFGB30T65RQDN

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