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AFGHL25T120RHD Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part AFGHL25T120RHD
Description IGBT
Feature IGBT for Automotive Application 1200 V, 25 A AFGHL25T120RHD Description This In sulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Fi eld Stop II Trench construction.
Provid es superior performance in demanding sw itching applications, offering both low on state voltage and minimal switching loss, which is AEC Q101 qualified offe r the optimum performance for both hard and soft switching topology in automot ive application.
Features
• Extremely Efficient Trench with Field Stop Techn ology
• Maximum Junction Temperature: TJ = 175°C
• Short Circuit Withstan d Time 8 ms
• 100% of .
Manufacture ON Semiconductor
Datasheet
Download AFGHL25T120RHD Datasheet
Part AFGHL25T120RHD
Description IGBT
Feature IGBT for Automotive Application 1200 V, 25 A AFGHL25T120RHD Description This In sulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Fi eld Stop II Trench construction.
Provid es superior performance in demanding sw itching applications, offering both low on state voltage and minimal switching loss, which is AEC Q101 qualified offe r the optimum performance for both hard and soft switching topology in automot ive application.
Features
• Extremely Efficient Trench with Field Stop Techn ology
• Maximum Junction Temperature: TJ = 175°C
• Short Circuit Withstan d Time 8 ms
• 100% of .
Manufacture ON Semiconductor
Datasheet
Download AFGHL25T120RHD Datasheet

AFGHL25T120RHD

AFGHL25T120RHD
AFGHL25T120RHD

AFGHL25T120RHD

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