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AFGHL50T65RQDN Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part AFGHL50T65RQDN
Description IGBT
Feature IGBT for Automotive Application 650 V, 5 0 A AFGHL50T65RQDN Using novel field st op IGBT technology, onsemi’s new seri es of field stop 4th generation IGBTs o ffer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Fea tures
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature C o−efficient for Easy Parallel Operati on
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.
6 V (T yp.
) @ IC = 50 A
• 100% of the Parts Tested for ILM (Note 2)
• High Input Impedance
• Fast Switching
• Ti .
Manufacture ON Semiconductor
Datasheet
Download AFGHL50T65RQDN Datasheet
Part AFGHL50T65RQDN
Description IGBT
Feature IGBT for Automotive Application 650 V, 5 0 A AFGHL50T65RQDN Using novel field st op IGBT technology, onsemi’s new seri es of field stop 4th generation IGBTs o ffer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Fea tures
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature C o−efficient for Easy Parallel Operati on
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.
6 V (T yp.
) @ IC = 50 A
• 100% of the Parts Tested for ILM (Note 2)
• High Input Impedance
• Fast Switching
• Ti .
Manufacture ON Semiconductor
Datasheet
Download AFGHL50T65RQDN Datasheet

AFGHL50T65RQDN

AFGHL50T65RQDN
AFGHL50T65RQDN

AFGHL50T65RQDN

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