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FGHL50T65LQDT Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FGHL50T65LQDT
Description IGBT
Feature Field Stop Trench IGBT 50 A, 650 V FGH L50T65LQDT Field stop 4th generation Lo w VCE(Sat) IGBT technology and Full cur rent rated copak Diode technology.
Fea tures
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature C o−efficient for Easy Parallel Operati ng
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.
15 V ( Typ.
) @ IC = 50 A
• 100% of the Parts are Tested for ILM (Note 2)
• Smooth and Optimized Switching
• Tight Para meter Distribution
• Co−packed with Soft and Fast Recovery Diode
• These Devices are Pb−Free and are RoHS Com pliant Typical Applications
• Solar In .
Manufacture ON Semiconductor
Datasheet
Download FGHL50T65LQDT Datasheet
Part FGHL50T65LQDT
Description IGBT
Feature Field Stop Trench IGBT 50 A, 650 V FGH L50T65LQDT Field stop 4th generation Lo w VCE(Sat) IGBT technology and Full cur rent rated copak Diode technology.
Fea tures
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature C o−efficient for Easy Parallel Operati ng
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.
15 V ( Typ.
) @ IC = 50 A
• 100% of the Parts are Tested for ILM (Note 2)
• Smooth and Optimized Switching
• Tight Para meter Distribution
• Co−packed with Soft and Fast Recovery Diode
• These Devices are Pb−Free and are RoHS Com pliant Typical Applications
• Solar In .
Manufacture ON Semiconductor
Datasheet
Download FGHL50T65LQDT Datasheet

FGHL50T65LQDT

FGHL50T65LQDT
FGHL50T65LQDT

FGHL50T65LQDT

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