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FGHL50T65LQDTL4 Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FGHL50T65LQDTL4
Description IGBT
Feature Field Stop Trench IGBT 50 A, 650 V FGH L50T65LQDTL4 Field stop 4th generation Low VCE(Sat) IGBT technology and Full c urrent rated copack Diode technology.
Features
• Maximum Junction Temperatu re: TJ = 175°C
• Positive Temperatur e Co−efficient for Easy Parallel Oper ating
• High Current Capability
• L ow Saturation Voltage: VCE(Sat) = 1.
15 V (Typ.
) @ IC = 50 A
• 100% of the Pa rts are Tested for ILM (Note 2)
• Smo oth and Optimized Switching
• Tight P arameter Distribution
• Co−packed w ith Soft and Fast Recovery Diode
• Th ese Devices are Pb−Free and are RoHS Compliant Typical Applications
• Sol ar .
Manufacture ON Semiconductor
Datasheet
Download FGHL50T65LQDTL4 Datasheet
Part FGHL50T65LQDTL4
Description IGBT
Feature Field Stop Trench IGBT 50 A, 650 V FGH L50T65LQDTL4 Field stop 4th generation Low VCE(Sat) IGBT technology and Full c urrent rated copack Diode technology.
Features
• Maximum Junction Temperatu re: TJ = 175°C
• Positive Temperatur e Co−efficient for Easy Parallel Oper ating
• High Current Capability
• L ow Saturation Voltage: VCE(Sat) = 1.
15 V (Typ.
) @ IC = 50 A
• 100% of the Pa rts are Tested for ILM (Note 2)
• Smo oth and Optimized Switching
• Tight P arameter Distribution
• Co−packed w ith Soft and Fast Recovery Diode
• Th ese Devices are Pb−Free and are RoHS Compliant Typical Applications
• Sol ar .
Manufacture ON Semiconductor
Datasheet
Download FGHL50T65LQDTL4 Datasheet

FGHL50T65LQDTL4

FGHL50T65LQDTL4
FGHL50T65LQDTL4

FGHL50T65LQDTL4

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