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FGY100T65SCDT Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FGY100T65SCDT
Description IGBT
Feature FGY100T65SCDT Field Stop Trench IGBT, S hort Circuit Rated, 650V, 100A General Description Using novel field stop IGBT technology, ON Semiconductor’s new s eries of field stop 3rd generation IGBT s offer the optimum performance for sol ar, UPS, motor control, ESS and HVAC ap plications where low conduction and swi tching losses are essential.
Features Maximum Junction Temperature: TJ = 1 75°C
• Positive Temperature Co-effic ient for Easy Parallel Operating
• Hi gh Current Capability
• Low Saturatio n Voltage: VCE(sat) = 1.
5 V (Typ.
) @ IC = 100 A
• High Input Impedance
• F ast Switching
• Short Cirruit .
Manufacture ON Semiconductor
Datasheet
Download FGY100T65SCDT Datasheet
Part FGY100T65SCDT
Description IGBT
Feature FGY100T65SCDT Field Stop Trench IGBT, S hort Circuit Rated, 650V, 100A General Description Using novel field stop IGBT technology, ON Semiconductor’s new s eries of field stop 3rd generation IGBT s offer the optimum performance for sol ar, UPS, motor control, ESS and HVAC ap plications where low conduction and swi tching losses are essential.
Features Maximum Junction Temperature: TJ = 1 75°C
• Positive Temperature Co-effic ient for Easy Parallel Operating
• Hi gh Current Capability
• Low Saturatio n Voltage: VCE(sat) = 1.
5 V (Typ.
) @ IC = 100 A
• High Input Impedance
• F ast Switching
• Short Cirruit .
Manufacture ON Semiconductor
Datasheet
Download FGY100T65SCDT Datasheet

FGY100T65SCDT

FGY100T65SCDT
FGY100T65SCDT

FGY100T65SCDT

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