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FGH60T65SQD-F155 Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FGH60T65SQD-F155
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 60 A FG H60T65SQD-F155 Description Using novel field stop IGBT technology, ON Semicond uctor’s new series of field stop 4th generation IGBTs offer the optimum perf ormance for solar inverter, UPS, welder , telecom, ESS and PFC applications whe re low conduction and switching losses are essential.
Features
• Max Junctio n Temperature 175°C
• Positive Tempe rature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.
6 V (Typ.
) @ IC = 60 A
• 100% of th e Parts Tested for ILM(1)
• High Inpu t Impedance
• Fast Switching
• .
Manufacture ON Semiconductor
Datasheet
Download FGH60T65SQD-F155 Datasheet
Part FGH60T65SQD-F155
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 60 A FG H60T65SQD-F155 Description Using novel field stop IGBT technology, ON Semicond uctor’s new series of field stop 4th generation IGBTs offer the optimum perf ormance for solar inverter, UPS, welder , telecom, ESS and PFC applications whe re low conduction and switching losses are essential.
Features
• Max Junctio n Temperature 175°C
• Positive Tempe rature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.
6 V (Typ.
) @ IC = 60 A
• 100% of th e Parts Tested for ILM(1)
• High Inpu t Impedance
• Fast Switching
• .
Manufacture ON Semiconductor
Datasheet
Download FGH60T65SQD-F155 Datasheet

FGH60T65SQD-F155

FGH60T65SQD-F155
FGH60T65SQD-F155

FGH60T65SQD-F155

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