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AFGB40T65SQDN Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part AFGB40T65SQDN
Description IGBT
Feature AFGB40T65SQDN IGBT for Automotive Appli cations, 650 V, 40 A, D2PAK Features Maximum Junction Temperature: TJ = 17 5°C
• High Speed Switching Series VCE(sat) = 1.
6 V (Typ.
) @ IC = 40 A 100% of the Part are Dynamically Tes ted (Note 1)
• AEC−Q101 Qualified These Devices are Pb−Free and are RoHS Compliant Typical Applications
• Automotive On Board Charger
• Automo tive DC/DC Converter for HEV ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless othe rwise stated) Parameter Symbol Value Unit Collector to Emitter Voltage V CES 650 V Gate-to-Emitter Voltage V GES ±20 V Transient Gate-to-Emitt .
Manufacture ON Semiconductor
Datasheet
Download AFGB40T65SQDN Datasheet
Part AFGB40T65SQDN
Description IGBT
Feature AFGB40T65SQDN IGBT for Automotive Appli cations, 650 V, 40 A, D2PAK Features Maximum Junction Temperature: TJ = 17 5°C
• High Speed Switching Series VCE(sat) = 1.
6 V (Typ.
) @ IC = 40 A 100% of the Part are Dynamically Tes ted (Note 1)
• AEC−Q101 Qualified These Devices are Pb−Free and are RoHS Compliant Typical Applications
• Automotive On Board Charger
• Automo tive DC/DC Converter for HEV ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless othe rwise stated) Parameter Symbol Value Unit Collector to Emitter Voltage V CES 650 V Gate-to-Emitter Voltage V GES ±20 V Transient Gate-to-Emitt .
Manufacture ON Semiconductor
Datasheet
Download AFGB40T65SQDN Datasheet

AFGB40T65SQDN

AFGB40T65SQDN
AFGB40T65SQDN

AFGB40T65SQDN

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