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HGTG20N60B3 Datasheet, Equivalent, N-Channel IGBT.

N-Channel IGBT

N-Channel IGBT

 

 

 

Part HGTG20N60B3
Description N-Channel IGBT
Feature UFS Series N-Channel IGBTs 40 A, 600 V H GTG20N60B3 The HGTG20N60B3 is a Generat ion III MOS gated high voltage switchin g devices combining the best features o f MOSFETs and bipolar transistors.
Thes e devices have the high input impedance of a MOSFET and the low on−state con duction loss of a bipolar transistor.
T he much lower on−state voltage drop v aries only moderately between 25°C and 150°C.
The IGBT is ideal for many hig h voltage switching applications operat ing at moderate frequencies where low c onduction losses are essential, such as : AC and DC motor controls, power suppl ies and drivers for .
Manufacture ON Semiconductor
Datasheet
Download HGTG20N60B3 Datasheet
Part HGTG20N60B3
Description N-Channel IGBT
Feature UFS Series N-Channel IGBTs 40 A, 600 V H GTG20N60B3 The HGTG20N60B3 is a Generat ion III MOS gated high voltage switchin g devices combining the best features o f MOSFETs and bipolar transistors.
Thes e devices have the high input impedance of a MOSFET and the low on−state con duction loss of a bipolar transistor.
T he much lower on−state voltage drop v aries only moderately between 25°C and 150°C.
The IGBT is ideal for many hig h voltage switching applications operat ing at moderate frequencies where low c onduction losses are essential, such as : AC and DC motor controls, power suppl ies and drivers for .
Manufacture ON Semiconductor
Datasheet
Download HGTG20N60B3 Datasheet

HGTG20N60B3

HGTG20N60B3
HGTG20N60B3

HGTG20N60B3

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