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HGTG20N60B3D Datasheet, Equivalent, N-Channel IGBT.

N-Channel IGBT

N-Channel IGBT

 

 

 

Part HGTG20N60B3D
Description N-Channel IGBT
Feature UFS Series N-Channel IGBT with Anti-Para llel Hyperfast Diode 40 A, 600 V HGTG20 N60B3D The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipol ar transistors.
The device has the high input impedance of a MOSFET and the lo w on−state conduction loss of a bipol ar transistor.
The much lower on−stat e voltage drop varies only moderately b etween 25°C and 150°C.
The diode used in anti−parallel with the IGBT is th e RHRP3060.
The IGBT is ideal for many high voltage switching applications ope rating at moderate frequencies where lo w conduction losses ar .
Manufacture ON Semiconductor
Datasheet
Download HGTG20N60B3D Datasheet
Part HGTG20N60B3D
Description N-Channel IGBT
Feature UFS Series N-Channel IGBT with Anti-Para llel Hyperfast Diode 40 A, 600 V HGTG20 N60B3D The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipol ar transistors.
The device has the high input impedance of a MOSFET and the lo w on−state conduction loss of a bipol ar transistor.
The much lower on−stat e voltage drop varies only moderately b etween 25°C and 150°C.
The diode used in anti−parallel with the IGBT is th e RHRP3060.
The IGBT is ideal for many high voltage switching applications ope rating at moderate frequencies where lo w conduction losses ar .
Manufacture ON Semiconductor
Datasheet
Download HGTG20N60B3D Datasheet

HGTG20N60B3D

HGTG20N60B3D
HGTG20N60B3D

HGTG20N60B3D

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